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Research and Development


LSRL Inc. provides Research and Development services in the area of Group IV epitaxial growth.

Areas of expertise include:

  • Ge on Si for advanced photonic devices (selective and blanket)
  • Strained SiGe on Si, and strained Si on relaxed SiGe
  • Carbon-doping for boron diffusion control and for bandgap/strain engineering
  • Multiple Quantum-well structures for electronic and photonic applications
  • Etch-stop layers for MEMS accelerometers, resonators, and gyroscopes
  • High-resistivity and high-purity epi growth, including Si precursor evaluation
  • Boron coating (pureB) for UV and electron detectors and novel IR diodes
  • Trench-fill for power devices
  • Thickness range from nm-scale to many microns
  • Silicon-on-Insulator (SOI) including Silicon-on-Sapphire (SOS)
  • And many more!
  • Contact LSRL for more information